1999. 12. 16 1/2 semiconductor technical data MJE13007F triple diffused npn transistor revision no : 3 switching regulator application. high voltage switching application. high speed dc-dc converter application. features excellent switching times : t on =1.6 s(max.), t f =0.7 s(max.), at i c =5a high collector voltage : v cbo =700v. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 1 ma dc current gain h fe (1) v ce =5v, i c =2a 19 - 36 h fe (2) v ce =5v, i c =5a 10 - 30 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.4a - - 1 v i c =5a, i b =1a - - 2 i c =8a, i b =2a - - 3 base-emitter saturation voltage v be(sat) i c =2a, i b =0.4a - - 1.5 v i c =5a, i b =1a - - 1.6 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 - 110 - pf transition frequency f t v ce =10v, i c =0.5a 4 - - mhz turn-on time t on i b1 25? b1 i cc v =125v i b2 i b2 300 s i =i =1a 2% b1 b2 output duty cycle input < = - - 1.6 s storage time t stg - - 3 s fall time t f - - 0.7 s characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 8 a pulse i cp 16 base current i b 4 a collector power dissipation (tc=25 1 ) p c 40 w junction temperature t j 150 1 storage temperature range t stg -55 150 1
1999. 12. 16 2/2 MJE13007F revision no : 3 c - v cb collector-base voltage v (v) collector output capacitance saturation voltage ce(sat) collector current i (a) c ce(sat) v ,v - i collector current i (a) dc current gain h 0.01 fe 0.1 1 h - i fe c c 10 common emitter v =5v ce tc=25 c v ,v (v) 0.1 1 0.3 3 1 10 30 100 300 1k 3 5 10 30 50 100 300 500 1k p - ta collector power dissipation 0 0 ambient temperature ta ( c) ob cb c (pf) ob common infinite heat sink emitter f=1mhz ta=25 c tc=ta 10 0 100 0.1 1 100 10 0.01 be(sat) c be(sat) 0.3 3 30 0.03 0.1 0.3 1 3 10 v be(sat) ce(sat) v switching time ( s) collector current i (a) 0.1 10 100 300 500 50 30 c 1k 3k 5k 10k switching characteristic v =125v i /i =5 cc c b 0.3 1 3 10 t stg f t collector current i (a) 1 collector emitter voltage v (v) 1k 10 100 ce c 0.01 safe operating area 3 30 300 0.03 0.1 0.3 1 3 10 30 i max(pulsed) c * single nonrepetitive pulse tc=25 c curves must be derated lineary with increase in temperature * 1 s 10 0 s 1ms dc * * * c p (w) c 25 50 75 100 125 150 175 200 10 20 30 40 50 60
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